
High vacuum coating equipment developed for thick film formation in semiconductor manufacturing
| Vacuum characteristics | Ultimate pressure | 2×10-5 Pa or less |
|---|---|---|
| Exhaust time | Within 18min to 4×10-4 Pa | |
| Outgas release | 4×10-6 Pa•m3/s | |
| Production capacity (Throughput) |
Planetary dome × 3 | |
| 4" silicon wafer | 42 wafers/batch (14 wafers/dome×3 domes) | |
| 5" silicon wafer | 24 wafers/batch (8 wafers/dome×3 domes) | |
| 6" silicon wafer | 18 wafers/batch (6 wafers/dome×3 domes) | |
| Evaporating characteristics |
Film thickness distribution | Within ±5% |
| Evaporating source | Resistance heating evaporating source: 8 units | |
| Evaporator power supply | 10V 1000A | |