
Best suited to form back face electrodes on discrete devices
| Equipment | CCS-1401 | CCS-1601 |
|---|---|---|
| Sputtering method | Magnetron down sputtering | |
| Wafer size | 5in (4in) | 6in (5in) |
| Sputtering source | Model P-GUN125RD (Φ5in×2) ×7 | |
| Sputtering power supply | DC: 6kW×2 (6kW×4) | |
| Ion etching | RF: 1kW×1 | |
| Main pump | Cryo pump | |
| Coating uniformity | ≤±10% | ≤±10% |
| Ultimate pressure (S/C) | 8×10-5 Pa | |