CFS-12P-100H Batch Type Sputtering Equipment

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Designed primarily for electronic components, can also be used as multi-purpose sputtering equipment.

Target utilization efficiency
High utilization efficiency of 57% is achieved by a new rotary magnet. (17.5% improvement from our previous equipment (Cu))
Attachment efficiency
Attachment efficiency of 51% is achieved by a 4-axis rotation jig optimized by simulation technology.
High efficiency film forming of 29% is achieved by high target utilization efficiency and attachment efficiency.
57% (target utilization efficiency) × 51% (attachment efficiency) = 29% (film forming efficiency)
Through-the-wall type
Through-the-wall type with a vertical chamber, an improvement from the conventional flat type chamber
Layout design focuses on maintainability
Maintenance can be performed from both the front and the back of the equipment. This allows other equipment to be positioned next to this equipment, making more effective use of the clean room.
Large area inverse sputtering function
The substrate holder can contain four wafers within its 1000mm diameter. High frequency plasma control technology with such a large area, enables efficient impedance matching to the substrate.

Vacuum characteristics	Ultimate pressure	7×10^-5 Pa or lower
	Exhaust time	Within 20min to 1×10^-3 Pa
	Outgas release	5×10^-6 Pa m³ / s
Sputtering characteristics	Film thickness distribution	Within ±5%
	Film forming speed	SiO₂ : 3.2nm / min kW
	Sputtering power source	Max. two units selectable from DC (3kW, 6kW) and/or RF (1kW, 3kW, 5kW)
	Sputtering source	8-inch×1 unit or 3 units
	Inverse sputtering	Capable to RF 1kW
Heating characteristics	Lamp heating	200°C
Heating characteristics	Cooling	N₂ gas cooling
Production capacity	Jig	Rotation jig for Φ400x4 substrates