We consider wafer edge examination to be a major contributor to higher yield rates.
In order to achieve a lower TCO (Total Cost of Ownership), inspection functionality must go beyond detection of defects that simply lower yields to detect and identify signs of potential defects that are otherwise hidden by noise.
EI-12 provides a complete solution through pre-eminent performance that identifies defects while achieving early identification of potential defects.

- Applications
Wafer edge inspection
Notch inspection
Diameter measurement
Automatic inspection
Comparative inspection before and after cleaning
- Functional overview
Capture image of notch: 640 x 480 x 5 =1,536,000 pixel
Capture complete image of notch
Capture image of bevel: 1024 x 100,000 x 3 = 184,320,000 pixel
Captures image of complete curve of the bevel
Diameter measurement: (max., min., ave., elliptic ratio)
- Applicable to
EI-12: Si bare or patterned wafer (Φ300mm)
EI-8: Si bare or patterned wafer (Φ200mm)
- Basic Performance
Pixel Resolution: 5μm/pixels
Inspection Method: Automatic Inspection with Image Intensifier
Inspection Part: Notch (upper, lower, front, right side, left side)
Bevel (upper bevel, apex, lower bevel)
Data Sampling: Captures high resolution image
Throughput (reference value): EI-12: 25 sheets/25 minutes
- Standard features
POD Opener: x 1
FOUP Stage: x 1
Cassette change transfer
GEM/SECS communication
- Options
Diameter Measurement (ellipse, diameter, max., min., ave.)
Wafer ID reader
FOUP/FOSBID reader
Color classification
Other product: EI-12PL (300mm) for dual FOUP type
