
Strips photo resist used as the mask in forming circuits on a wafer in the semiconductor wafer process.
| Material | Resist |
|---|---|
| Wafer size | 8-inch (6-inch) |
| Methode | Down stream ashing |
| Ashing chamber | Two chambers |
| Discharge | Microwave2.45GHz 1kW 2power supply 3kW 2power supply (option) |
| Transfer mechanism | Mechanical transfer |
| Wafer temperature | 250°C |
| Pressure control | APC (conductance valve) |
| Vacuum pump | Dry pump (two sets) |
| Gases | O2, CF4 (Max.3gases/option) |
|---|---|
| Ashing rate | 4.5 to 8µm/min |
| Uniformity | ±5% |
| Metal contamination | <1×10E11 atoms/cm2 |
| Particles | <20pcs (>0.2µm) |
| Throughput | 160 wafers/h |