
Performs chemical dry etching of thin film on a semiconductor wafer in gaseous state (dry). Damage-free etching process through perfect separation of the etching unit and plasma generating unit enables wide use in the damage removal process.
| Etching method | Microwave-utilized chemical dry etching |
|---|---|
| Etching material | Poly-Si, Si3N4,BPSG, W, Mo, Ta etc |
| Wafer size | Φ8"(OptionΦ6", Φ5") |
| Etching chamber | Single wafer |
| Vacuum pump | Dry pump |
| Pressure control | Conductance valve control |
| Etching gas | CF4, O2, N2 etc |
| Plasma power supply | Microwave 2. 45GHz 1. 0kW |