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About Shibaura Mechatronics Investor Relations Products Social and Environmental
Activities
About Shibaura MechatronicsInvestor RelationsProducts Social and Environmental
Activities About Shibaura Mechatronics Investor RelationsProducts Social and Environmental
Activities
About Shibaura MechatronicsInvestor Relations Products Social and Environmental
Activities
Performs damage-free ashing of the resist on porous low-k film.
- Low damage ashing by remote plasma method
- High productivity of 160 wafers/h
- Double process chamber
- In combination with ICE/CDE/µASH process chamber
- Many functions (series etching/parallel etching)
- Applicable to 300mm wafers
| Material |
Resist on porous low-k |
|---|---|
| Water size | 300mm (200mm) |
| Method | Downstream |
| Process chambers | Two chambers |
| Discharge | Microwave 2.45GHz |
| Transfer mechanism | Mechanical transfer |
| Wafer temperature | 250-370°C |
| Pressure controls | APC (Throttle valve) × 2 |
| Vacuum pumps | Dry pump × 3 |
| Etching rate | Resist 1.2µm/min |
|---|---|
| Uniformity | ≤ ±7% |
| Δk | ≤ 0.1 |
| Metal contamination | ≤ 1 × 10E10 atoms/cm² |
| Particles | ≥ 10 pcs/wafer (≥ 0.16µm) |
| Throughput |
≤ 160 wafers/h |
